FCA22N60N vs FCA22012A vs FCA22N60

 
PartNumberFCA22N60NFCA22012AFCA22N60
DescriptionMOSFET 600V N-Channel SupreMOS
ManufacturerON Semiconductor-FSC
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-3PN-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current22 A--
Rds On Drain Source Resistance140 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation205 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameSupreMOS--
PackagingTube-Tube
Height20.1 mm--
Length16.2 mm--
SeriesFCA22N60N--
Transistor Type1 N-Channel-1 N-Channel
TypeSupreMOS--
Width5 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min22 S--
Fall Time4 ns-4 ns
Product TypeMOSFET--
Rise Time16.7 s-16.7 s
Factory Pack Quantity450--
SubcategoryMOSFETs--
Typical Turn Off Delay Time49 ns-49 ns
Typical Turn On Delay Time16.9 s-16.9 s
Unit Weight0.225789 oz-0.225789 oz
Package Case--TO-3P-3
Pd Power Dissipation--205 W
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--22 A
Vds Drain Source Breakdown Voltage--650 V
Rds On Drain Source Resistance--140 mOhms
Forward Transconductance Min--22 S
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