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| PartNumber | FCP110N65F | FCP11N60 | FCP11N60,FCPF7N60,11N60, |
| Description | MOSFET SuperFET2 650V, 110mohm | MOSFET 600V 11A N-CH | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | 600 V | - |
| Id Continuous Drain Current | 35 A | 11 A | - |
| Rds On Drain Source Resistance | 110 mOhms | 380 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 5 V | - | - |
| Vgs Gate Source Voltage | 20 V, 30 V | 30 V | - |
| Qg Gate Charge | 98 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 357 W | 125 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | SuperFET II FRFET | - | - |
| Packaging | Tube | Tube | - |
| Height | 16.3 mm | 16.3 mm | - |
| Length | 10.67 mm | 10.67 mm | - |
| Series | FCP110N65F | FCP11N60 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.7 mm | 4.7 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Forward Transconductance Min | 30 S | 9.7 S | - |
| Fall Time | 5.7 ns | 56 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 21 ns | 98 ns | - |
| Factory Pack Quantity | 800 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 89 ns | 119 ns | - |
| Typical Turn On Delay Time | 31 ns | 34 ns | - |
| Unit Weight | 0.063493 oz | 0.063493 oz | - |
| Type | - | MOSFET | - |