PartNumber | FCP190N65F | FCP190N65S3 | FCP190N65 |
Description | MOSFET SF2 650V 190MOHM F TO220 | MOSFET SuperFET3 650V 190 mOhm, TO220F PKG | |
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-220-3 | TO-220-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
Id Continuous Drain Current | 20.6 A | 17 A | - |
Rds On Drain Source Resistance | 190 mOhms | 159 mOhms | - |
Vgs th Gate Source Threshold Voltage | 5 V | 2.5 V | - |
Vgs Gate Source Voltage | 20 V | 30 V | - |
Qg Gate Charge | 60 nC | 33 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 208 W | 144 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | SuperFET II FRFET | - | - |
Packaging | Tube | Tube | - |
Height | 16.3 mm | - | - |
Length | 10.67 mm | - | - |
Series | FCP190N65F | FCP190N65S3 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 4.7 mm | - | - |
Brand | ON Semiconductor / Fairchild | ON Semiconductor | - |
Forward Transconductance Min | 18 S | 10 S | - |
Fall Time | 4.2 ns | 16 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 11 ns | 22 ns | - |
Factory Pack Quantity | 800 | 800 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 62 ns | 57 ns | - |
Typical Turn On Delay Time | 25 ns | 20 ns | - |
Unit Weight | 0.063493 oz | 0.063493 oz | - |