FCPF16N60 vs FCPF16N60NT vs FCPF16N60,FCPF16N60NT

 
PartNumberFCPF16N60FCPF16N60NTFCPF16N60,FCPF16N60NT
DescriptionMOSFET 600V N-CH SuperFETMOSFET N-CH 600V TO-220-3
ManufacturerON SemiconductorFSC-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current16 A--
Rds On Drain Source Resistance260 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation37.9 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Height16.3 mm--
Length10.67 mm--
SeriesFCPF16N60--
Transistor Type1 N-Channel1 N-Channel-
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min11.5 S--
Fall Time90 ns20.2 ns-
Product TypeMOSFET--
Rise Time130 ns15.5 ns-
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time165 ns60.3 ns-
Typical Turn On Delay Time42 ns15.8 ns-
Unit Weight0.080072 oz0.080072 oz-
Package Case-TO-220-3-
Pd Power Dissipation-357 W-
Vgs Gate Source Voltage-30 V-
Id Continuous Drain Current-16 A-
Vds Drain Source Breakdown Voltage-600 V-
Rds On Drain Source Resistance-170 mOhms-
Forward Transconductance Min-13 S-
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