FDC6305N vs FDC6305N , LP2980AIM5-1. vs FDC6305N 63XXX

 
PartNumberFDC6305NFDC6305N , LP2980AIM5-1.FDC6305N 63XXX
DescriptionMOSFET SSOT-6 N-CH 20V
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSSOT-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current2.7 A--
Rds On Drain Source Resistance60 mOhms--
Vgs Gate Source Voltage8 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation900 mW--
ConfigurationDual--
Channel ModeEnhancement--
TradenamePowerTrench--
PackagingReel--
Height1.1 mm--
Length2.9 mm--
ProductMOSFET Small Signal--
SeriesFDC6305N--
Transistor Type2 N-Channel--
TypeMOSFET--
Width1.6 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min8 S--
Fall Time8.5 ns--
Product TypeMOSFET--
Rise Time8.5 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time11 ns--
Typical Turn On Delay Time5 ns--
Part # AliasesFDC6305N_NL--
Unit Weight0.001058 oz--
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