FDFMA2N028Z vs FDFMA2N028Z , 1N5226B-T vs FDFMA2P029

 
PartNumberFDFMA2N028ZFDFMA2N028Z , 1N5226B-TFDFMA2P029
DescriptionMOSFET 20V N-Ch PT MFET SCHOTTKY
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseMicroFET-6--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current3.7 A--
Rds On Drain Source Resistance68 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.4 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenamePowerTrench--
PackagingReel--
Height0.75 mm--
Length2 mm--
ProductMOSFET Small Signal--
SeriesFDFMA2N028Z--
Transistor Type1 N-Channel--
Width2 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min16 S--
Fall Time8 ns--
Product TypeMOSFET--
Rise Time8 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time14 ns--
Typical Turn On Delay Time8 ns--
Unit Weight0.002116 oz--
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