FDG6318PZ vs FDG6318PZ , 1N5231B vs FDG6318PZ-NL

 
PartNumberFDG6318PZFDG6318PZ , 1N5231BFDG6318PZ-NL
DescriptionMOSFET Dual PCh Digital
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-323-6--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current500 mA--
Rds On Drain Source Resistance780 mOhms--
Vgs Gate Source Voltage12 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation300 mW--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Height1.1 mm--
Length2 mm--
ProductMOSFET Small Signal--
SeriesFDG6318PZ--
Transistor Type2 P-Channel--
TypeFET--
Width1.25 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min1.1 S--
Fall Time13 ns--
Product TypeMOSFET--
Rise Time13 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time40 ns--
Typical Turn On Delay Time10 ns--
Unit Weight0.000988 oz--
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