FDI040N06 vs FDI044AN03L vs FDI045N10A

 
PartNumberFDI040N06FDI044AN03LFDI045N10A
DescriptionMOSFET PT3 Low Qg 60V, 4.0MohmMOSFET N-CH 100V 120A I2PAK-3
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-262-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current168 A--
Rds On Drain Source Resistance3.2 mOhms--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation231 W--
ConfigurationSingle--
PackagingTube--
Height7.88 mm--
Length10.29 mm--
SeriesFDI040N06--
Transistor Type1 N-Channel--
TypeN-Channel MOSFET--
Width4.83 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min169 S--
Fall Time24 ns--
Product TypeMOSFET--
Rise Time40 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time55 ns--
Typical Turn On Delay Time30 ns--
Unit Weight0.073511 oz--
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