FDMC86102 vs FDMC86012 vs FDMC86102L

 
PartNumberFDMC86102FDMC86012FDMC86102L
DescriptionMOSFET 100/20V N-Chan PowerTrenchMOSFET 30V N-Channel PowerTrench MOSFETMOSFET 100V N-Channel PowerTrench MOSFET
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePower-33-8Power-33-8Power-33-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V30 V100 V
Id Continuous Drain Current20 A88 A18 A
Rds On Drain Source Resistance32.8 mOhms2.7 mOhms23 mOhms
Vgs Gate Source Voltage20 V12 V-
Qg Gate Charge8 nC, 13 nC27 nC7.3 nC, 15 nC
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation2.3 W54 W41 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancement-
TradenamePowerTrenchPowerTrench Power ClipPowerTrench
PackagingReelReelReel
Height0.8 mm0.8 mm0.8 mm
Length3.3 mm3.3 mm3.3 mm
SeriesFDMC86102FDMC86012FDMC86102L
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypePower Trench MOSFET--
Width3.3 mm3.3 mm3.3 mm
BrandON Semiconductor / FairchildON Semiconductor / FairchildON Semiconductor / Fairchild
Forward Transconductance Min19 S144 S26 S
Fall Time4 ns8 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time4 ns11 ns-
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time14 ns43 ns-
Typical Turn On Delay Time8 ns11 ns-
Unit Weight0.001133 oz0.005386 oz0.005832 oz
Vgs th Gate Source Threshold Voltage-1 V-
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