PartNumber | FDMS10C4D2N | FDMS1D4N03S | FDMS1D2N03DSD |
Description | MOSFET Energy Inversion DC-AC | MOSFET PT9 30V/12V Nch PowerTrench SyncFET | MOSFET PT11N 30/12 & PT11 |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | Power-56-8 | Power-56-8 | PowerClip56-8 |
Packaging | Reel | Reel | Reel |
Height | 1.1 mm | - | - |
Length | 6 mm | - | - |
Series | FDMS10C4D2N | FDMS1D4N03S | - |
Width | 5 mm | - | - |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.003175 oz | 0.003739 oz | - |
Number of Channels | - | 1 Channel | 2 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 30 V | 30 V |
Id Continuous Drain Current | - | 38 A | 30 A |
Rds On Drain Source Resistance | - | 1.09 mOhms | 1.2 mOhms, 4 mOhms |
Vgs th Gate Source Threshold Voltage | - | 3 V | - |
Qg Gate Charge | - | 143 nC | 11 nC, 39 nC |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Configuration | - | Single | Dual |
Channel Mode | - | Enhancement | Enhancement |
Transistor Type | - | 1 N-Channel | - |
Vgs Gate Source Voltage | - | - | 16 V |