FDMS86200 vs FDMS86200 BSC190N15 vs FDMS86200 POWER 56

 
PartNumberFDMS86200FDMS86200 BSC190N15FDMS86200 POWER 56
DescriptionMOSFET 150V N-Channel PowerTrench MOSFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseDualCool-56-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage150 V--
Id Continuous Drain Current52 A--
Rds On Drain Source Resistance15 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge33 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation104 W--
ConfigurationSingle--
TradenamePowerTrench--
PackagingReel--
Height1.1 mm--
Length6 mm--
SeriesFDMS86200--
Transistor TypeN-Channel--
TypeN-Channel Power Trench MOSFET--
Width5 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min33 S--
Fall Time5.8 ns--
Product TypeMOSFET--
Rise Time7.9 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time27 ns--
Typical Turn On Delay Time13 ns--
Unit Weight0.002402 oz--
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