FDU6N25 vs FDU6N25TU vs FDU6N50

 
PartNumberFDU6N25FDU6N25TUFDU6N50
DescriptionMOSFET N-Channel UniFET
ManufacturerON Semiconductor-FSC
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-251-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage250 V--
Id Continuous Drain Current4.4 A--
Rds On Drain Source Resistance1.1 Ohms--
Vgs th Gate Source Threshold Voltage5 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge6 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation50 W--
ConfigurationSingle--
PackagingTube--
Height6.3 mm--
Length6.8 mm--
SeriesFDU6N25--
Transistor Type1 N-Channel--
Width2.5 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min5.5 S--
Fall Time34 ns--
Product TypeMOSFET--
Rise Time60 ns--
Factory Pack Quantity5040--
SubcategoryMOSFETs--
Typical Turn Off Delay Time24 ns--
Typical Turn On Delay Time30 ns--
Unit Weight0.019013 oz--
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