FDWS86368-F085 vs FDWS86369-F085 vs FDWS86068-F085

 
PartNumberFDWS86368-F085FDWS86369-F085FDWS86068-F085
DescriptionMOSFET 80V N-Chnl Power Trench MOSFETMOSFET 80V N Chnl Power Trench MOSFETMOSFET 80V N-Chnl Power Trench MOSFET
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePower-56-8Power-56-8DFN-8
QualificationAEC-Q101AEC-Q101AEC-Q101
TradenamePowerTrenchPowerTrenchPowerTrench
PackagingReelReelReel
Height1.1 mm1.1 mm-
Length6 mm6 mm-
SeriesFDWS86368_F085FDWS86369_F085-
Width5 mm5 mm-
BrandON Semiconductor / FairchildON Semiconductor / FairchildON Semiconductor
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Part # AliasesFDWS86368_F085FDWS86369_F085-
Unit Weight0.006095 oz0.006095 oz-
Number of Channels--1 Channel
Transistor Polarity--N-Channel
Vds Drain Source Breakdown Voltage--100 V
Id Continuous Drain Current--80 A
Rds On Drain Source Resistance--6.4 mOhms
Vgs th Gate Source Threshold Voltage--2 V
Vgs Gate Source Voltage--20 V
Qg Gate Charge--43 nC
Minimum Operating Temperature--- 55 C
Maximum Operating Temperature--+ 150 C
Pd Power Dissipation--214 W
Configuration--Single
Channel Mode--Enhancement
Fall Time--7 ns
Rise Time--6 ns
Typical Turn Off Delay Time--24 ns
Typical Turn On Delay Time--15 ns
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