FF1200R17KE3 vs FF1200R17KE3_B2 vs FF1200R17KE3B2NOSA1

 
PartNumberFF1200R17KE3FF1200R17KE3_B2FF1200R17KE3B2NOSA1
DescriptionIGBT Modules 1700V 1200A DUALIGBT Modules N-CH 1.7KV 1.7KAIGBT MODULE 1700V 1200A
ManufacturerInfineonInfineon Technologies-
Product CategoryIGBT ModulesIGBTs - Modules-
RoHSN--
ConfigurationDualDual Dual Collector Dual Emitter-
Collector Emitter Voltage VCEO Max1700 V--
Collector Emitter Saturation Voltage2 V--
Continuous Collector Current at 25 C1600 A1700 A-
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation5.95 kW--
Package / CaseIHM130-10--
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 125 C+ 125 C-
PackagingTray--
Height38 mm--
Length140 mm--
Width130 mm--
BrandInfineon Technologies--
Mounting StyleSMD/SMTSMD/SMT-
Maximum Gate Emitter Voltage20 V+/- 20 V-
Product TypeIGBT Modules--
Factory Pack Quantity2--
SubcategoryIGBTs--
Part # AliasesFF1200R17KE3NOSA1 SP000100586--
Product-IGBT Silicon Modules-
Package Case-IHM130-
Collector Emitter Voltage VCEO Max-1700 V-
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