FF1400R12IP4 vs FF1400R12IP4 , 1N5355B vs FF1400R12IP4 FF1400R17IP

 
PartNumberFF1400R12IP4FF1400R12IP4 , 1N5355BFF1400R12IP4 FF1400R17IP
DescriptionIGBT Modules N-CH 1.2KV 1.4KA
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationDual--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.05 V--
Continuous Collector Current at 25 C1400 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation7.65 kW--
Package / CasePRIME3--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
Height38 mm--
Length250 mm--
Width89 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity2--
SubcategoryIGBTs--
Part # AliasesFF1400R12IP4BOSA1 SP000609758--
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