PartNumber | FF450R07ME4_B11 | FF450R07ME4B11BOSA1 | FF450R07ME4 |
Description | IGBT Modules IGBT Module 450A 650V | Trans IGBT Module N-CH 650V 560A 1450000mW 11-Pin AG-ECONOD-3 Tray | |
Manufacturer | Infineon | - | - |
Product Category | IGBT Modules | - | - |
RoHS | Y | - | - |
Product | IGBT Silicon Modules | - | - |
Configuration | Dual | - | - |
Collector Emitter Voltage VCEO Max | 650 V | - | - |
Collector Emitter Saturation Voltage | 1.95 V | - | - |
Continuous Collector Current at 25 C | 560 A | - | - |
Gate Emitter Leakage Current | 100 nA | - | - |
Pd Power Dissipation | 1450 W | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Packaging | Tray | - | - |
Brand | Infineon Technologies | - | - |
Mounting Style | Chassis Mount | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Product Type | IGBT Modules | - | - |
Factory Pack Quantity | 6 | - | - |
Subcategory | IGBTs | - | - |
Part # Aliases | FF450R07ME4B11BOSA1 SP000725482 | - | - |