FF450R17ME4_B11 vs FF450R17ME4 vs FF450R17ME4B11BOSA1

 
PartNumberFF450R17ME4_B11FF450R17ME4FF450R17ME4B11BOSA1
DescriptionIGBT Modules IGBT Module 450A 1700VIGBT Modules IGBT 1700V 450AIGBT MODULE VCES 600V 450A
ManufacturerInfineonInfineon-
Product CategoryIGBT ModulesIGBT Modules-
RoHSY--
PackagingTrayTray-
BrandInfineon TechnologiesInfineon Technologies-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity610-
SubcategoryIGBTsIGBTs-
Part # AliasesFF450R17ME4B11BOSA1 SP000691648FF450R17ME4BOSA1 SP000408712-
Product-IGBT Silicon Modules-
Configuration-Dual-
Collector Emitter Voltage VCEO Max-1700 V-
Collector Emitter Saturation Voltage-2.3 V-
Continuous Collector Current at 25 C-600 A-
Gate Emitter Leakage Current-400 nA-
Pd Power Dissipation-2500 W-
Minimum Operating Temperature-- 40 C-
Maximum Operating Temperature-+ 150 C-
Mounting Style-Chassis Mount-
Maximum Gate Emitter Voltage-20 V-
Unit Weight-12.169517 oz-
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