 |  | | |
| PartNumber | FF650R17IE4 | FF650R17IE4 , 1N5383B | FF650R17IE4 FF600R12IP4 |
| Description | IGBT Modules N-CH 1.7KV 930A | ||
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 1700 V | - | - |
| Collector Emitter Saturation Voltage | 2.45 V | - | - |
| Continuous Collector Current at 25 C | 930 A | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Pd Power Dissipation | 4.15 kW | - | - |
| Package / Case | PRIME2 | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tray | - | - |
| Height | 38 mm | - | - |
| Length | 172 mm | - | - |
| Width | 89 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | Chassis Mount | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 3 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | FF650R17IE4BOSA1 SP000614664 | - | - |
| Unit Weight | 1.872 lbs | - | - |