FGA5065ADF vs FGA5000 vs FGA50N100

 
PartNumberFGA5065ADFFGA5000FGA50N100
DescriptionIGBT Transistors FS3TIGBT TO3PN 50A 650V
ManufacturerON Semiconductor--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-3PN--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max650 V--
Collector Emitter Saturation Voltage2.28 V--
Maximum Gate Emitter Voltage30 V--
Continuous Collector Current at 25 C100 A--
Pd Power Dissipation268 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
SeriesFGA5065ADF--
PackagingTube--
Continuous Collector Current Ic Max50 A--
BrandON Semiconductor / Fairchild--
Gate Emitter Leakage Current+/- 400 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity450--
SubcategoryIGBTs--
Unit Weight0.225789 oz--
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