FGH25T120SMD-F155 vs FGH25T120 vs FGH25T120SMD

 
PartNumberFGH25T120SMD-F155FGH25T120FGH25T120SMD
DescriptionIGBT Transistors 1200V, 25A Field Stop Trench IGBT
ManufacturerON SemiconductorFairchild Semiconductor-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-247G03-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage1.9 V--
Maximum Gate Emitter Voltage25 V--
Continuous Collector Current at 25 C50 A--
Pd Power Dissipation428 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
SeriesFGH25T120SMD--
PackagingTubeTube-
Continuous Collector Current Ic Max25 A--
BrandON Semiconductor / Fairchild--
Gate Emitter Leakage Current400 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity450--
SubcategoryIGBTs--
Part # AliasesFGH25T120SMD_F155--
Unit Weight0.225401 oz--
Package Case-TO-247-3-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-TO-247-
Power Max-428W-
Reverse Recovery Time trr-60ns-
Current Collector Ic Max-50A-
Voltage Collector Emitter Breakdown Max-1200V-
IGBT Type-Trench Field Stop-
Current Collector Pulsed Icm-100A-
Vce on Max Vge Ic-2.4V @ 15V, 25A-
Switching Energy-1.74mJ (on), 560μJ (off)-
Gate Charge-225nC-
Td on off 25°C-40ns/490ns-
Test Condition-600V, 25A, 23 Ohm, 15V-
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