FGH30S150P vs FGH30S130P vs FGH30S

 
PartNumberFGH30S150PFGH30S130PFGH30S
DescriptionIGBT Transistors SA2TIGBT TO247 30A 1500VIGBT Transistors 1300V 30A FS SA Trench IGBT
ManufacturerON SemiconductorON SemiconductorFairchild Semiconductor
Product CategoryIGBT TransistorsIGBT TransistorsIGBTs - Single
RoHSYY-
TechnologySiSi-
Package / CaseTO-247-3TO-3PN-
Mounting StyleThrough HoleThrough HoleThrough Hole
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max1.5 kV1300 V-
Collector Emitter Saturation Voltage2.15 V1.9 V1.9 V
Maximum Gate Emitter Voltage25 V25 V25 V
Continuous Collector Current at 25 C60 A60 A60 A
Pd Power Dissipation500 W500 W-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
SeriesFGH30S150PFGH30S130P-
PackagingTubeTubeTube
Continuous Collector Current Ic Max30 A60 A60 A
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Gate Emitter Leakage Current+/- 500 nA--
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity450450-
SubcategoryIGBTsIGBTs-
Unit Weight0.225401 oz0.225401 oz0.225401 oz
Package Case--TO-247-3
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--TO-247
Power Max--500W
Reverse Recovery Time trr---
Current Collector Ic Max--60A
Voltage Collector Emitter Breakdown Max--1300V
IGBT Type--Trench Field Stop
Current Collector Pulsed Icm--90A
Vce on Max Vge Ic--2.3V @ 15V, 30A
Switching Energy---
Gate Charge--78nC
Td on off 25°C---
Test Condition---
Pd Power Dissipation--500 W
Collector Emitter Voltage VCEO Max--1300 V
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