FGH40T100SMD vs FGH40T100 vs FGH40T100SMD,FGH40T100,

 
PartNumberFGH40T100SMDFGH40T100FGH40T100SMD,FGH40T100,
DescriptionIGBT Transistors 1000V 40A Field Stop Trench IGBT
ManufacturerON Semiconductor--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-247--
Mounting StyleThrough Hole--
Collector Emitter Voltage VCEO Max1000 V--
Collector Emitter Saturation Voltage2.3 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C80 A--
Pd Power Dissipation333 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
SeriesFGH40T100SMD--
PackagingTube--
BrandON Semiconductor / Fairchild--
Gate Emitter Leakage Current500 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity450--
SubcategoryIGBTs--
Unit Weight0.225401 oz--
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