FGH50N3 vs FGH50N3-NL vs FGH50N3PWD

 
PartNumberFGH50N3FGH50N3-NLFGH50N3PWD
DescriptionIGBT Transistors 300V PT N-Channel
ManufacturerON Semiconductor--
Product CategoryIGBT Transistors--
RoHSE--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max300 V--
Collector Emitter Saturation Voltage1.3 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C75 A--
Pd Power Dissipation463 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesFGH50N3--
PackagingTube--
Continuous Collector Current Ic Max75 A--
Height20.82 mm--
Length15.87 mm--
Width4.82 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current75 A--
Gate Emitter Leakage Current+/- 250 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity450--
SubcategoryIGBTs--
Part # AliasesFGH50N3_NL--
Unit Weight0.225401 oz--
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