FGH75T65SQDNL4 vs FGH75T65SQD-F155 vs FGH75T65SQD

 
PartNumberFGH75T65SQDNL4FGH75T65SQD-F155FGH75T65SQD
DescriptionIGBT Transistors 650V/75 FAST IGBTIGBT Transistors 650V FS4 Trench IGBT
ManufacturerON SemiconductorON Semiconductor-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-247-4TO-247-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max650 V650 V-
Collector Emitter Saturation Voltage1.43 V1.6 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C200 A150 A-
Pd Power Dissipation375 W375 W-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
PackagingTubeTube-
Continuous Collector Current Ic Max200 A--
BrandON SemiconductorON Semiconductor / Fairchild-
Gate Emitter Leakage Current250 nA+/- 400 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity450450-
SubcategoryIGBTsIGBTs-
Series-FGH75T65SQD-
Part # Aliases-FGH75T65SQD_F155-
Unit Weight-0.225401 oz-
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