FJA3835TU vs FJA3835 vs FJA3835 J3835

 
PartNumberFJA3835TUFJA3835FJA3835 J3835
DescriptionBipolar Transistors - BJT NPN Silicon
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-3P-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max120 V--
Collector Base Voltage VCBO700 V--
Emitter Base Voltage VEBO8 V--
Maximum DC Collector Current8 A--
Gain Bandwidth Product fT4 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max250--
Height18.9 mm (Max)--
Length15.8 mm (Max)--
PackagingTube--
Width5 mm (Max)--
BrandON Semiconductor / Fairchild--
Continuous Collector Current8 A--
DC Collector/Base Gain hfe Min120--
Pd Power Dissipation80 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity30--
SubcategoryTransistors--
Part # AliasesFJA3835TU_NL--
Unit Weight0.238311 oz--
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