FJL4215OTU vs FJL4215OTU_Q vs FJL4215OTU_NL

 
PartNumberFJL4215OTUFJL4215OTU_QFJL4215OTU_NL
DescriptionBipolar Transistors - BJT PNP Si Transistor EpitaxialBipolar Transistors - BJT PNP Si Transistor Epitaxial
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-264-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 250 V--
Collector Base Voltage VCBO- 250 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 0.4 V--
Maximum DC Collector Current17 A--
Gain Bandwidth Product fT30 MHz--
Minimum Operating Temperature- 50 C--
Maximum Operating Temperature+ 150 C--
SeriesFJL4215--
DC Current Gain hFE Max160--
Height26 mm--
Length20 mm--
PackagingTube--
Width5 mm--
BrandON Semiconductor / Fairchild--
DC Collector/Base Gain hfe Min80--
Pd Power Dissipation150 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity375--
SubcategoryTransistors--
Part # AliasesFJL4215OTU_NL--
Unit Weight0.238311 oz--
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