FJP13007H2TU vs FJP13007H2TU(ROHS) vs FJP13007H2TU,FJP13007-H2

 
PartNumberFJP13007H2TUFJP13007H2TU(ROHS)FJP13007H2TU,FJP13007-H2
DescriptionBipolar Transistors - BJT NPN Sil Transistor
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max400 V--
Collector Base Voltage VCBO700 V--
Emitter Base Voltage VEBO9 V--
Collector Emitter Saturation Voltage1 V--
Maximum DC Collector Current8 A--
Gain Bandwidth Product fT4 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesFJP13007--
Height9.4 mm--
Length10.67 mm--
PackagingTube--
Width4.83 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current8 A--
DC Collector/Base Gain hfe Min26--
Pd Power Dissipation80 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Part # AliasesFJP13007H2TU_NL--
Unit Weight0.063493 oz--
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