FJP13009H2TU vs FJP13009H2TU(J13009-2) vs FJP13009H2TU,FJP13007H2T

 
PartNumberFJP13009H2TUFJP13009H2TU(J13009-2)FJP13009H2TU,FJP13007H2T
DescriptionBipolar Transistors - BJT NPN Sil Transistor
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max400 V--
Collector Base Voltage VCBO700 V--
Emitter Base Voltage VEBO9 V--
Collector Emitter Saturation Voltage1 V--
Maximum DC Collector Current12 A--
Gain Bandwidth Product fT4 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesFJP13009--
Height9.4 mm--
Length10.1 mm--
PackagingTube--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current12 A--
DC Collector/Base Gain hfe Min8--
Pd Power Dissipation100 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Part # AliasesFJP13009H2TU_NL--
Unit Weight0.063493 oz--
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