PartNumber | FJP5200OTU | FJP5200 | FJP5200R |
Description | Bipolar Transistors - BJT NPN Epitaxial Silicon | ||
Manufacturer | ON Semiconductor | FSC | Fairchild Semiconductor |
Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | Transistors - Bipolar (BJT) - RF |
RoHS | Y | - | - |
Mounting Style | Through Hole | - | Through Hole |
Package / Case | TO-220-3 | - | - |
Transistor Polarity | NPN | - | NPN |
Configuration | Single | - | Single |
Collector Emitter Voltage VCEO Max | 230 V | - | - |
Collector Base Voltage VCBO | 230 V | - | - |
Emitter Base Voltage VEBO | 5 V | - | - |
Maximum DC Collector Current | 15 A | - | 15 A |
Gain Bandwidth Product fT | 30 MHz | - | 30 MHz |
Minimum Operating Temperature | - 50 C | - | - 50 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Series | FJP5200 | - | - |
DC Current Gain hFE Max | 80 | - | 55 |
Height | 9.4 mm | - | - |
Length | 10.67 mm | - | - |
Packaging | Tube | - | Tube |
Width | 4.83 mm | - | - |
Brand | ON Semiconductor / Fairchild | - | - |
DC Collector/Base Gain hfe Min | 80 at 1 A, 5 V | - | - |
Pd Power Dissipation | 100000 mW | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 50 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.063493 oz | - | 0.063493 oz |
Package Case | - | - | TO-220 |
Pd Power Dissipation | - | - | 100000 mW |
Collector Emitter Voltage VCEO Max | - | - | 230 V |
Collector Base Voltage VCBO | - | - | 230 V |
Emitter Base Voltage VEBO | - | - | 5 V |
DC Collector Base Gain hfe Min | - | - | 55 at 1 A at 5 V |