FJP5304DTU vs FJP5304D vs FJP5321

 
PartNumberFJP5304DTUFJP5304DFJP5321
DescriptionBipolar Transistors - BJT NPN Triple Diffused Planar SiliconBipolar Transistors - BJT NPN Si Transistor Tripple Diff Planar
ManufacturerON SemiconductorON SemiconductorFAIRCHILD
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single
RoHSYY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max400 V400 V-
Collector Base Voltage VCBO700 V700 V-
Emitter Base Voltage VEBO12 V12 V-
Collector Emitter Saturation Voltage1.5 V--
Maximum DC Collector Current4 A4 A-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesFJP5304D--
DC Current Gain hFE Max4040-
Height9.4 mm9.4 mm (Max)-
Length10.67 mm10.67 mm (Max)-
PackagingTubeBulk-
Width4.83 mm4.83 mm (Max)-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Continuous Collector Current4 A4 A-
DC Collector/Base Gain hfe Min88-
Pd Power Dissipation70 W70 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity1000200-
SubcategoryTransistorsTransistors-
Part # AliasesFJP5304DTU_NLFJP5304D_NL-
Unit Weight0.063493 oz0.080072 oz-
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