FJX3014RTF vs FJX3014RTF_Q vs FJX3014RTF , 1N816

 
PartNumberFJX3014RTFFJX3014RTF_QFJX3014RTF , 1N816
DescriptionBipolar Transistors - Pre-Biased NPN Si Transistor EpitaxialBipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationSingle--
Transistor PolarityNPN--
Typical Input Resistor4.7 kOhms--
Typical Resistor Ratio0.1--
Mounting StyleSMD/SMT--
Package / CaseSOT-323-3--
DC Collector/Base Gain hfe Min68--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current0.1 A--
Peak DC Collector Current100 mA--
Pd Power Dissipation200 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesFJX3014R--
PackagingReel--
DC Current Gain hFE Max68--
Emitter Base Voltage VEBO10 V--
Height0.9 mm--
Length2 mm--
TypeNPN Epitaxial Silicon Transistor--
Width1.25 mm--
BrandON Semiconductor / Fairchild--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000176 oz--
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