FQD1N80TM vs FQD1N80TM-NL vs FQD1N80TM-CUT TAPE

 
PartNumberFQD1N80TMFQD1N80TM-NLFQD1N80TM-CUT TAPE
DescriptionMOSFET Power MOSFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage800 V--
Id Continuous Drain Current1 A--
Rds On Drain Source Resistance20 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.39 mm--
Length6.73 mm--
SeriesFQD1N80--
Transistor Type1 N-Channel--
TypeMOSFET--
Width6.22 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min0.75 S--
Fall Time25 ns--
Product TypeMOSFET--
Rise Time25 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesFQD1N80TM_NL--
Unit Weight0.009171 oz--
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