FQD7N30TM vs FQD7N30TM,FQD7N30 vs FQD7N30TM-NL

 
PartNumberFQD7N30TMFQD7N30TM,FQD7N30FQD7N30TM-NL
DescriptionMOSFET 300V N-Channel QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage300 V--
Id Continuous Drain Current5.5 A--
Rds On Drain Source Resistance700 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.39 mm--
Length6.73 mm--
SeriesFQD7N30--
Transistor Type1 N-Channel--
TypeMOSFET--
Width6.22 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min4 S--
Fall Time35 ns--
Product TypeMOSFET--
Rise Time75 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time25 ns--
Typical Turn On Delay Time13 ns--
Part # AliasesFQD7N30TM_NL--
Unit Weight0.009184 oz--
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