FQN1N50CTA vs FQN1N50C vs FQN1N50CBU

 
PartNumberFQN1N50CTAFQN1N50CFQN1N50CBU
DescriptionMOSFET N-CH/500V 0.38A/6OHMMOSFET N-CH 500V 380MA TO-92
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-92-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current380 mA--
Rds On Drain Source Resistance4.6 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation890 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingAmmo Pack--
Height5.33 mm--
Length5.2 mm--
ProductMOSFET Small Signal--
SeriesFQN1N50C--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.19 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min0.6 S--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns--
Typical Turn On Delay Time10 ns--
Unit Weight0.008466 oz--
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