 | |  | |
| PartNumber | IPB65R280E6 | IPB65R280C6ATMA1 | IPB65R280C6 |
| Description | MOSFET N-Ch 700V 13.8A D2PAK-2 CoolMOS E6 | MOSFET N-Ch 700V 13.8A D2PAK-2 CoolMOS C6 | MOSFET N-Ch 700V 13.8A D2PAK-2 CoolMOS C6 |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
| Configuration | Single | Single | Single |
| Tradename | CoolMOS | CoolMOS | CoolMOS |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | CoolMOS E6 | CoolMOS C6 | CoolMOS C6 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | IPB65R280E6ATMA1 IPB65R280E6XT SP000795274 | IPB65R280C6ATMA1 SP000745030 | - |
| Unit Weight | 0.077603 oz | 0.139332 oz | 0.139332 oz |
| Id Continuous Drain Current | - | 13.8 A | - |
| Rds On Drain Source Resistance | - | 250 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 45 nC | - |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 104 W | - |
| Channel Mode | - | Enhancement | - |
| Fall Time | - | 12 ns | 12 ns |
| Rise Time | - | 11 ns | 11 ns |
| Typical Turn Off Delay Time | - | 105 ns | 105 nS |
| Typical Turn On Delay Time | - | 13 ns | - |
| Part Aliases | - | - | IPB65R280C6ATMA1 IPB65R280C6XT SP000745030 |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 104 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 13.8 A |
| Vds Drain Source Breakdown Voltage | - | - | 700 V |
| Rds On Drain Source Resistance | - | - | 280 mOhms |
| Qg Gate Charge | - | - | 45 nC |