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| PartNumber | IPD65R660CFDA | IPD65R660CFDATMA1 | IPD65R660CFDAATMA1 |
| Description | MOSFET N-Ch 650V 6A DPAK-2 | MOSFET LOW POWER_LEGACY | MOSFET N-CH TO252-3 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
| Id Continuous Drain Current | 6 A | 6 A | - |
| Rds On Drain Source Resistance | 594 mOhms | 594 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | 3.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 20 nC | 22 nC | - |
| Minimum Operating Temperature | - 40 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 62.5 W | 62.5 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | CoolMOS | CoolMOS | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Series | CoolMOS CFDA | CoolMOS CFDA | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 10 ns | 10 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 8 ns | 8 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 40 ns | 40 ns | - |
| Typical Turn On Delay Time | 9 ns | 9 ns | - |
| Part # Aliases | IPD65R660CFDAATMA1 IPD65R66CFDAXT SP000928260 | IPD65R660CFD SP001117748 | - |
| Unit Weight | 0.011993 oz | 0.139332 oz | - |