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| PartNumber | IPI50R140CPXKSA1 | IPI50R140CP | IPI50R199CP |
| Description | MOSFET HIGH POWER_LEGACY | MOSFET N-Ch 500V 23A I2PAK-3 CoolMOS CP | RF Bipolar Transistors MOSFET N-Ch 550V 17A I2PAK-3 CoolMOS CP |
| Manufacturer | Infineon | Infineon | INFINEON |
| Product Category | MOSFET | MOSFET | FETs - Single |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-262-3 | TO-262-3 | - |
| Packaging | Tube | Tube | Tube |
| Height | 9.45 mm | 9.45 mm | - |
| Length | 10.2 mm | 10.2 mm | - |
| Width | 4.5 mm | 4.5 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | IPI50R140CPXKSA1 SP000680734 | IPI50R140CPXKSA1 IPI5R14CPXK SP000680734 | - |
| Unit Weight | 0.084199 oz | 0.084199 oz | 0.084199 oz |
| RoHS | - | Y | - |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 500 V | - |
| Id Continuous Drain Current | - | 23 A | - |
| Rds On Drain Source Resistance | - | 140 mOhms | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 192 W | - |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | - |
| Tradename | - | CoolMOS | CoolMOS |
| Series | - | CoolMOS CE | CoolMOS CP |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Fall Time | - | 8 ns | 10 ns |
| Rise Time | - | 14 ns | 14 ns |
| Factory Pack Quantity | - | 500 | - |
| Typical Turn Off Delay Time | - | 80 ns | 80 nS |
| Typical Turn On Delay Time | - | 35 ns | - |
| Part Aliases | - | - | IPI50R199CPXK IPI50R199CPXKSA1 SP000523756 |
| Package Case | - | - | I2PAK-3 |
| Pd Power Dissipation | - | - | 139 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 17 A |
| Vds Drain Source Breakdown Voltage | - | - | 550 V |
| Rds On Drain Source Resistance | - | - | 199 mOhms |
| Qg Gate Charge | - | - | 34 nC |