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| PartNumber | IPI65R110CFDXKSA1 | IPI65R150CFD | IPI65R110CFD |
| Description | MOSFET N-CH 650V 31.2A TO262 | Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | RF Bipolar Transistors MOSFET N-Ch 700V 31.2A I2PAK-3 CoolMOS CFD2 |
| Manufacturer | - | - | FEELING |
| Product Category | - | - | FETs - Single |
| Series | - | - | CoolMOS CFD2 |
| Packaging | - | - | Tube |
| Part Aliases | - | - | IPI65R110CFDXK IPI65R110CFDXKSA1 SP000896398 |
| Unit Weight | - | - | 0.084199 oz |
| Mounting Style | - | - | Through Hole |
| Tradename | - | - | CoolMOS |
| Package Case | - | - | I2PAK-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 277.8 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 6 ns |
| Rise Time | - | - | 11 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 31.2 A |
| Vds Drain Source Breakdown Voltage | - | - | 700 V |
| Rds On Drain Source Resistance | - | - | 110 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 68 nS |
| Qg Gate Charge | - | - | 118 nC |