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| PartNumber | IRF2903ZPBF | IRF2903ZLPBF | IRF2903Z |
| Description | MOSFET MOSFT 30V 260A 2.4mOhm 160nC Qg | MOSFET 30V 1 N-CH HEXFET 2.4mOhms 160nC | |
| Manufacturer | Infineon | Infineon | IR |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-262-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 75 A | 260 A | - |
| Rds On Drain Source Resistance | 2.4 mOhms | 2.4 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 160 nC | 160 nC | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 290 W | 290 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | Tube | - |
| Height | 15.65 mm | 9.45 mm | - |
| Length | 10 mm | 10.2 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.4 mm | 4.5 mm | - |
| Brand | Infineon / IR | Infineon / IR | - |
| Forward Transconductance Min | 120 S | - | - |
| Fall Time | 37 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 100 ns | - | - |
| Factory Pack Quantity | 1000 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 48 ns | - | - |
| Typical Turn On Delay Time | 24 ns | - | - |
| Part # Aliases | SP001561574 | SP001561564 | - |
| Unit Weight | 0.211644 oz | 0.084199 oz | - |