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| PartNumber | IRF5305S | IRF5305SPBF | IRF5305ST |
| Description | MOSFET Transistor, P-Channel, TO-263AB | MOSFET P-CH 55V 31A D2PAK | |
| Manufacturer | IR | IR | IR |
| Product Category | FETs - Single | FETs - Single | FETs - Single |
| Packaging | - | Tube | - |
| Unit Weight | - | 0.139332 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | TO-252-3 | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 P-Channel | - |
| Pd Power Dissipation | - | 110 W | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 63 ns | - |
| Rise Time | - | 66 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | - 31 A | - |
| Vds Drain Source Breakdown Voltage | - | - 55 V | - |
| Rds On Drain Source Resistance | - | 60 mOhms | - |
| Transistor Polarity | - | P-Channel | - |
| Typical Turn Off Delay Time | - | 39 ns | - |
| Typical Turn On Delay Time | - | 14 ns | - |
| Qg Gate Charge | - | 42 nC | - |
| Channel Mode | - | Enhancement | - |