IRF9953PBF vs IRF9953 vs IRF9953S

 
PartNumberIRF9953PBFIRF9953IRF9953S
DescriptionMOSFET DUAL -30V P-CH 20V VGS MAXMOSFET 2P-CH 30V 2.3A 8-SOIC
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current2.3 A--
Rds On Drain Source Resistance250 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge6.9 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingTubeTube-
Height1.75 mm--
Length4.9 mm--
Transistor Type2 P-Channel--
TypePower MOSFET--
Width3.9 mm--
BrandInfineon / IR--
Fall Time6.9 ns--
Product TypeMOSFET--
Rise Time14 ns--
Factory Pack Quantity95--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns--
Typical Turn On Delay Time9.7 ns--
Part # AliasesSP001565680--
Unit Weight0.019048 oz--
Series-HEXFETR-
Package Case-8-SOIC (0.154", 3.90mm Width)-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-8-SO-
FET Type-2 P-Channel (Dual)-
Power Max-2W-
Drain to Source Voltage Vdss-30V-
Input Capacitance Ciss Vds-190pF @ 15V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-2.3A-
Rds On Max Id Vgs-250 mOhm @ 1A, 10V-
Vgs th Max Id-1V @ 250μA-
Gate Charge Qg Vgs-12nC @ 10V-
Top