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| PartNumber | IRFS52N15DPBF | IRFS52N15D | IRFS52N15DTR |
| Description | MOSFET 150V 1 N-CH HEXFET 32mOhms 60nC | ||
| Manufacturer | Infineon | IR | IR |
| Product Category | MOSFET | FETs - Single | IC Chips |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 150 V | - | - |
| Id Continuous Drain Current | 60 A | - | - |
| Rds On Drain Source Resistance | 32 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 60 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 320 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Tube | - | Reel |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Type | Smps MOSFET | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 25 ns | - | 25 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 47 ns | - | 47 ns |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 28 ns | - | 28 ns |
| Typical Turn On Delay Time | 16 ns | - | 16 ns |
| Part # Aliases | SP001557412 | - | - |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 3.8 W |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 60 A |
| Vds Drain Source Breakdown Voltage | - | - | 150 V |
| Rds On Drain Source Resistance | - | - | 32 mOhms |
| Qg Gate Charge | - | - | 60 nC |