| PartNumber | IRFSL4010PBF | IRFSL4020PBF | IRFSL4115PBF |
| Description | MOSFET MOSFT 100V 180A 4.7mOhm 143nC | MOSFET Audio MOSFT 200V 18A 105mOhm 18nC | Darlington Transistors MOSFET MOSFT 150V 99A 12.1mOhm 77nC |
| Manufacturer | Infineon | Infineon | International Rectifier |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-262-3 | TO-262-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 200 V | - |
| Id Continuous Drain Current | 180 A | 18 A | - |
| Rds On Drain Source Resistance | 3.9 mOhms | 105 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 143 nC | 18 nC | - |
| Pd Power Dissipation | 375 W | 100 W | - |
| Configuration | Single | Single | - |
| Packaging | Tube | Tube | Tube |
| Height | 9.45 mm | 9.45 mm | - |
| Length | 10.2 mm | 10.2 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 4.5 mm | 4.5 mm | - |
| Brand | Infineon Technologies | Infineon / IR | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 1000 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SP001567760 | SP001565208 | - |
| Unit Weight | 0.084199 oz | 0.084199 oz | 0.084199 oz |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Channel Mode | - | Enhancement | - |
| Forward Transconductance Min | - | 24 S | - |
| Fall Time | - | 6.3 ns | - |
| Rise Time | - | 12 ns | - |
| Typical Turn Off Delay Time | - | 16 ns | - |
| Typical Turn On Delay Time | - | 7.8 ns | - |
| Package Case | - | - | I2PAK-3 |
| Pd Power Dissipation | - | - | 375 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 99 A |
| Vds Drain Source Breakdown Voltage | - | - | 150 V |
| Rds On Drain Source Resistance | - | - | 10.3 mOhms |
| Qg Gate Charge | - | - | 77 nC |