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| PartNumber | IRFZ40PBF | IRFZ40 | IRFZ44 |
| Description | MOSFET N-CH 60V HEXFET MOSFET | MOSFET N-Ch 50 Volt 50 Amp | N-Chan 60V 50 Amp |
| Manufacturer | Vishay | STMicroelectronics | IR |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | E | N | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Packaging | Tube | Tube | Tube |
| Height | 15.49 mm | - | - |
| Length | 10.41 mm | - | - |
| Series | IRFZ | IRFZ40 | IRF/SIHFZ44 |
| Width | 4.7 mm | - | - |
| Brand | Vishay / Siliconix | STMicroelectronics | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 50 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.211644 oz | 0.011640 oz | 0.211644 oz |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 50 V | - |
| Id Continuous Drain Current | - | 50 A | - |
| Rds On Drain Source Resistance | - | 28 mOhms | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Minimum Operating Temperature | - | - 65 C | - 55 C |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Pd Power Dissipation | - | 150 W | - |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Fall Time | - | 25 ns | 92 ns |
| Rise Time | - | 110 ns | 110 ns |
| Typical Turn Off Delay Time | - | 60 ns | 45 ns |
| Package Case | - | - | TO-220-3 |
| Pd Power Dissipation | - | - | 150 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 50 A |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Rds On Drain Source Resistance | - | - | 28 mOhms |
| Typical Turn On Delay Time | - | - | 14 ns |