IRGS4615DTRRPBF vs IRGS4615DPBF vs IRGS4615DTRLPBF

 
PartNumberIRGS4615DTRRPBFIRGS4615DPBFIRGS4615DTRLPBF
DescriptionIGBT Transistors 600V TRENCH IGBT ULTRAFASTIGBT Transistors 600V TRENCH IGBT ULTRAFASTIGBT Transistors 600V TRENCH IGBT ULTRAFAST
ManufacturerInfineonInfineonInfineon Technologies
Product CategoryIGBT TransistorsIGBT TransistorsIGBTs - Single
TechnologySiSi-
Package / CaseTO-263-3TO-263-3-
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max600 V600 V-
Collector Emitter Saturation Voltage2 V2 V2 V
Maximum Gate Emitter Voltage20 V20 V+/- 20 V
Continuous Collector Current at 25 C23 A23 A23 A
Pd Power Dissipation99 W99 W-
Minimum Operating Temperature- 40 C- 40 C- 40 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
PackagingReelTubeTape & Reel (TR) Alternate Packaging
Continuous Collector Current Ic Max15 A15 A15 A
Height4.57 mm4.57 mm-
Length10.31 mm10.31 mm-
Width9.45 mm9.45 mm-
BrandInfineon / IRInfineon / IR-
Gate Emitter Leakage Current100 nA100 nA100 nA
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity80050-
SubcategoryIGBTsIGBTs-
Part # AliasesSP001549926SP001536486-
Unit Weight0.009185 oz0.009185 oz0.009185 oz
RoHS-Y-
Series---
Package Case--TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Input Type--Standard
Mounting Type--Surface Mount
Supplier Device Package--D2PAK
Power Max--99W
Reverse Recovery Time trr--60ns
Current Collector Ic Max--23A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type---
Current Collector Pulsed Icm--24A
Vce on Max Vge Ic--1.85V @ 15V, 8A
Switching Energy--70μJ (on), 145μJ (off)
Gate Charge--19nC
Td on off 25°C--30ns/95ns
Test Condition--400V, 8A, 47 Ohm, 15V
Pd Power Dissipation--99 W
Collector Emitter Voltage VCEO Max--600 V
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