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| PartNumber | IRLD014PBF | IRLD014 | IRLD014P |
| Description | MOSFET N-CH 60V HEXFET MOSFET HEXDI | MOSFET RECOMMENDED ALT 844-IRLD014PBF | |
| Manufacturer | Vishay | Vishay | Vishay Siliconix |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | E | N | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | HVMDIP-4 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 1.7 A | - | - |
| Rds On Drain Source Resistance | 200 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 5 V | - | - |
| Qg Gate Charge | 8.4 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 150 C |
| Pd Power Dissipation | 1.3 W | - | - |
| Configuration | Single | - | Single Dual Drain |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Tube | Tube | Tube |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 1.9 S | - | - |
| Fall Time | 26 ns | - | 110 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 110 ns | - | 110 ns |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 17 ns | - | 17 ns |
| Typical Turn On Delay Time | 9.3 ns | - | 9.3 ns |
| Series | - | - | - |
| Package Case | - | - | 4-DIP (0.300", 7.62mm) |
| Operating Temperature | - | - | -55°C ~ 175°C (TJ) |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | 4-DIP, Hexdip, HVMDIP |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 1.3W |
| Drain to Source Voltage Vdss | - | - | 60V |
| Input Capacitance Ciss Vds | - | - | 400pF @ 25V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 1.7A (Ta) |
| Rds On Max Id Vgs | - | - | 200 mOhm @ 1A, 5V |
| Vgs th Max Id | - | - | 2V @ 250μA |
| Gate Charge Qg Vgs | - | - | 8.4nC @ 5V |
| Pd Power Dissipation | - | - | 1.3 W |
| Vgs Gate Source Voltage | - | - | 10 V |
| Id Continuous Drain Current | - | - | 1.7 A |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Rds On Drain Source Resistance | - | - | 200 mOhms |