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| PartNumber | IRLR8259PBF | IRLR8259 | IRLR8259TRLPBF |
| Description | MOSFET 25V 1 N-CH HEXFET 8.7mOhms 6.8nC | ||
| Manufacturer | Infineon | IR | - |
| Product Category | MOSFET | IC Chips | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 25 V | - | - |
| Id Continuous Drain Current | 57 A | - | - |
| Rds On Drain Source Resistance | 12.9 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.35 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 6.8 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 48 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | HEXFET Power MOSFET | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon / IR | - | - |
| Forward Transconductance Min | 55 S | - | - |
| Fall Time | 8.9 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 38 ns | - | - |
| Factory Pack Quantity | 75 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 9.1 ns | - | - |
| Typical Turn On Delay Time | 8.4 ns | - | - |
| Part # Aliases | SP001558980 | - | - |
| Unit Weight | 0.139332 oz | - | - |