IRLS3813PBF vs IRLS3813 vs IRLS3813 LS3813

 
PartNumberIRLS3813PBFIRLS3813IRLS3813 LS3813
DescriptionMOSFET 30V Single N-Channel HEXFET
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current160 A--
Rds On Drain Source Resistance1.6 mOhms--
Vgs th Gate Source Threshold Voltage2.35 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge55 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation195 W--
ConfigurationSingle--
PackagingTube--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandInfineon / IR--
Forward Transconductance Min428 S--
Fall Time102 ns--
Product TypeMOSFET--
Rise Time202 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time33 ns--
Typical Turn On Delay Time32 ns--
Part # AliasesSP001576946--
Unit Weight0.139332 oz--
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