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| PartNumber | IXFN38N100P | IXFN38N100 | IXFN38N100Q2 |
| Description | MOSFET 38 Amps 1000V | MOSFET 38 Amps 1000V 0.25 Rds | |
| Manufacturer | IXYS | - | IXYS |
| Product Category | MOSFET | - | Module |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | Chassis Mount | - | SMD/SMT |
| Package / Case | SOT-227-4 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 1 kV | - | - |
| Id Continuous Drain Current | 38 A | - | - |
| Rds On Drain Source Resistance | 210 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 1 kW | - | - |
| Configuration | Single | - | Single Dual Source |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | HiPerFET | - | HyperFET |
| Packaging | Tube | - | Tube |
| Height | 9.6 mm | - | - |
| Length | 38.23 mm | - | - |
| Series | IXFN38N100 | - | HiPerFET |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 25.42 mm | - | - |
| Brand | IXYS | - | - |
| Fall Time | 40 ns | - | 15 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 55 ns | - | 28 ns |
| Factory Pack Quantity | 10 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 71 ns | - | 57 ns |
| Typical Turn On Delay Time | 74 ns | - | 25 ns |
| Unit Weight | 1.058219 oz | - | 1.340411 oz |
| Package Case | - | - | SOT-227-4, miniBLOC |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Chassis Mount |
| Supplier Device Package | - | - | SOT-227B |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 890W |
| Drain to Source Voltage Vdss | - | - | 1000V (1kV) |
| Input Capacitance Ciss Vds | - | - | 7200pF @ 25V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 38A |
| Rds On Max Id Vgs | - | - | 250 mOhm @ 19A, 10V |
| Vgs th Max Id | - | - | 5V @ 8mA |
| Gate Charge Qg Vgs | - | - | 250nC @ 10V |
| Pd Power Dissipation | - | - | 890 W |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 38 A |
| Vds Drain Source Breakdown Voltage | - | - | 1000 V |
| Rds On Drain Source Resistance | - | - | 250 mOhms |