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| PartNumber | IXTH1N200P3 | IXTH1N170DHV | IXTH1N100 |
| Description | MOSFET 2000V/1A HV Power MOSFET, TO-247 | MOSFET DISC MOSFET N-CH DEPL MODE-STD | MOSFET 0.1 Amps 1000V 80 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247HV-3 | TO-247-3 |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 2 kV | 1.7 kV | 1 kV |
| Id Continuous Drain Current | 1 A | 1 A | 1.5 A |
| Rds On Drain Source Resistance | 40 Ohms | 16 Ohms | 11 Ohms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 23.5 nC | 47 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 125 W | 290 W | 60 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Depletion | Enhancement |
| Packaging | Tube | - | Tube |
| Series | Polar3 | - | IXTH1N100 |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 400 mS | - | - |
| Fall Time | 80 ns | 216 ns | 18 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 26 ns | 38 ns | 19 ns |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 37 ns | 130 ns | 20 ns |
| Typical Turn On Delay Time | 16 ns | 46 ns | 18 ns |
| Unit Weight | 0.056438 oz | - | 0.229281 oz |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Height | - | - | 21.46 mm |
| Length | - | - | 16.26 mm |
| Width | - | - | 5.3 mm |